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| BTS 730 PWM Power Unit The device allows continuous power control for lamps,LEDs or inductive loads. * Highside switch * Overtemperatur protection * Short circuit / overload protection through pulse width reduction and overload shutdown * Load dump protection * Undervoltage and overvoltage shutdown with auto-restart and hysteresis * Reverse battery protection 1) * Timing frequency adjustable * Controlled switching rise and fall times * Maximum current internally limited * Protection against loss of GND 2) * Electrostatic discharge (ESD) protection * Package: P-DSO-20-6 (SMD) Note: Switching frequency is programmed with an external capacitor. Type Ordering Code Marking Package BTS730 Maximum Ratings Q67060-S7007-A2 - P-DSO-20-6 Parameter Active overvoltage prodection Short circuit current Input current (DC) Pin1 (Ct) and pin19 (VC) Operating temperature range Storage temperature range Power dissipation 3) Symbol Values >40 self-limited 2 2 -40...+150 -50...+150 3 2 35 75 Unit V mA mA C W W K/W Vbb (AZ) ISC ICt IVC Tj Tstg Ptot Rth JC Rth JA Ta=25C Ta=85C 3) Thermal resistance chip-case chip-ambient 1) 2) 3) With 150 resistor in signal GND connection. Potential between signal GND and load GND >0.5V 2 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm (one layer,70m thick) copper area for Vbb conection, PCB is vertical without air blowing. Semiconductor Group 1 12.96 BTS 730 Block Diagram Over / UnderOvervoltage Prodtection voltage Detection Temperature Sensor (4,5,6,7) (14,15,16,17) Vbb Timing Generator Pulse - width Comparator Pump and Logic Current Limiting Voltage Regulator (18) (1) (20) (19) (2) (3) (8,9,10,11,12,13) GND Ct Timing Cap. 68nF VREF VC 25k CB1 Bootstrap Capacitor 22nF CB2 OUT Signal GND Load GND Pin Definitions and Funktions Pin 1 Symbol Funktions Ct Timing capacitor for frequency CB1 2 Bootstrap capacitor CB2 3 Vbb 4,5,6,7 Supply voltage 14,15,16,1 (Leadframe connected) 7 8,9,10 OUT Output 11,12,13 18 GND Ground VC 19 Voltage for PWM-Control VREF 20 Reference Voltage Semiconductor Group 2 Pin Configuration (top view) Ct CB1 CB2 Vbb Vbb Vbb Vbb OUT OUT OUT 1 20 VREF 19 VC 18 GND 17 Vbb 16 Vbb 15 Vbb 14 Vbb 13 OUT 12 OUT 11 OUT 2 3 4 5 6 7 8 9 10 BTS 730 Electrical Characteristics unless otherwise specified.CBootstrap = 22nF at Tj = 25 EC, Parameter Symbol min. 5.9 1) 3 On-state resistance RON IL=3A, Vbb=12V Operating voltage Vbb Tj = -40 ...+150EC Nominal current, IL-ISO calculated value ISO-standard: Vbb-VOUT 0.5V, Tc=85C Load current limit ILLim Vbb-VOUT> 1V Undervoltage shutdown Vbb(LOW) IL = 3A Overvoltage shutdown Vbb(HI) IL = 3A Max.output voltage (RMS) VRMSmax IL = 3A, Vbb > 12 V Reference voltage VREF IREF= 10mA Reference current IREF pin 18 (GND) to pin 20 (VREF) short Internal current IR consumption during operation, measured in PWM gap Bootstrap voltage, pin 2 VB (CB1) to pin 3 (CB2) Vbb = 12 V, PWM frequency fPWM Tc = -40 ... +150 C, Ct = 68 nF Max. pulse duty factor Dimax IL = 3A, VC=0V , (50% VOUT) Min. pulse duty factor Dimin IL = 3A, VC=0V , (50% VOUT) Slew rate "on" du/dt(on) 10 ... 90% IOUT Slew rate "off" du/dt(off) 90 ... 10% IOUT Thermal overload trip Tj temperature 1) 2) Values typ. - Unit max. 70 16.9 2) m V A - - 3 17 12 2 - 20 4.2 18 5.4 19 14 3 150 5 - A V V V V - mA mA - 10 - V 50 95 20 20 150 98 8 - 100 14 Hz % % mV/s mV/s C - 120 120 Note: undervoltage shutdown Note: overvoltage shutdown Semiconductor Group 3 BTS 730 Circuits V Analog Logic-Input C (19) V REF V C (20) Voltage Regulator 2 A Pulse-width Comparator 6V max. 2mA (19) GND (18) Triangular Waveform Generator Input C t (1) V bb 6 A C t (1) Timing Generator 6V max. 2mA GND (18) Voltage Sensor (typ) Undervoltage Sensor Overvoltage Sensor +V bb +V bb V bb < 4.2 V Signal to the logic unit V bb > 18 V Signal to the logic unit GND GND Semiconductor Group 4 BTS 730 Application Note Dimming of dashboard lighting 4,5,6,7 14,15,16,17 20 + V bb 220nF VREF V bb 25 k O 19 BTS730 VC GND 18 Ct 1 68nF C B1 2 C B2 OUT 3 8,9,10 11,12,13 22nF 150 O 150 O Resistor for reverse battery and load dump prodection Load Package Outline P-DSO-20-6 Dimensions in mm Semiconductor Group 5 BTS 730 m 140 Typ.on-state resistance R ON= f (T C ) A 30 Typ. Load current limit I LLim = f (T C ) 120 25 100 20 80 15 60 40 10 20 -50 -25 0 25 50 75 100 125 150 5 -50 -25 0 25 50 75 100 125 150 TC C TC C V 6,0 Typ. undervoltage shutdown V bb(LOW) = f (T C) V 20,0 Typ. overvoltage shutdown V bb(HI) = f (T C ) 5,5 19,5 5,0 19,0 4,5 18,5 4,0 18,0 3,5 17,5 3,0 -50 -25 0 25 50 75 100 125 150 17,0 -50 -25 0 25 50 75 100 125 150 TC C TC C Semiconductor Group 6 BTS 730 % 15 14 13 12 11 10 9 8 7 6 5 -50 Typ. min. puls duty factor D im in = f (T C ) % 100 Typ. max. puls duty factor D im ax = f (T C ) 99 98 97 96 95 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 TC C TC C Hz 100 Typ. PWM Frequency f PWM = f (T C ) V 14,0 Typ. max. output voltage V RMSm ax = f (T C ), Vbb > 12V 90 13,5 80 13,0 70 12,5 60 50 -50 -25 0 25 50 75 100 125 150 12,0 -50 -25 0 25 50 75 100 125 150 TC C TC C Semiconductor Group 7 |
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